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Xilinx Selects Samsung Foundry 28nm HKMG Process Technology for FPGA

Posted by Ken Cheung in Other on Tuesday, February 23, 2010

Xilinx selected Samsung Electronics as their foundry partner for 28nm high-k metal gate (HKMG) process technology manufacturing optimized for a balance of performance and power efficiency. The 28nm HKMG process technology of Samsung Foundry enables Xilinx to implement a new generation of FPGAs that offer up to 50% lower power savings over devices built on the previous 45nm technology node.

Compared to previous generation technologies, the HKMG technology enables continued performance improvements with transistor scaling while significantly reducing power consumption. Designed with a gate-first approach, Samsung Foundry’s cost-effective, technology minimizes the use of restrictive design rules doubling the logic and SRAM density of 40nm processes.

Samsung Foundry provides advanced technology and manufacturing capacity to foundry customers. Processes down to 45nm are in volume production and Samsung Foundry 28nm HKMG process is expected to be production-ready in the first half of 2011. Samsung Electronics’ Foundry business is dedicated to support fabless and IDM semiconductor companies offering full service solutions encompassing design kits and proven IP to fully turnkey manufacturing to achieve market success with advanced IC designs.

More info: Samsung Electronics

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